M28W800BT-100N6

M28W800BT100N6T, Flash Memory, 13 V, 10μs, TSOP

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Price:: US $0.90~1.10 / piece [Get Latest Price]

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PartNumber:: M28W800BT-100N6

Brand:: STMicroelectronics - ST | Pack: TSOP | D/C: 03+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2012-05-16

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Part Number:M28W800BT-100N6
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Product Summary

The M28W800BT-100N6 is an 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.The M28W800BT-100N6 features an asymmetrical blocked architecture. The M28W800BT-100N6 has an array of 23 blocks: 8 Parameter Blocks of 4 KWord and 15 Main Blocks of 32 KWord. The M28W800BT-100N6 has the Parameter Blocks at the top of the memory address space while the M28W800BT-100N6 locates the Parameter Blocks starting from the bottom.

Parametrics

M28W800BT-100N6 absolute maximum ratings: (1)TA Ambient Operating Temperature: –40 to 85 °C; (2)TBIAS Temperature Under Bias: –40 to 125 °C; (3)TSTG Storage Temperature: –55 to 155 °C; (4)VIO Input or Output Voltage: –0.6 to VDDQ+0.6 V; (5)VDD, VDDQ Supply Voltage: –0.6 to 4.1 V; (6)VPP Program Voltage: –0.6 to 13 V.

Features

M28W800BT-100N6 features: (1)ACCESS TIME: 70, 85, 90,100ns; (2)PROGRAMMING TIME: 10μs typical; Double Word Programming Option; (3)COMMON FLASH INTERFACE: 64 bit Security Code; (4)MEMORY BLOCKS: Parameter Blocks (Top or Bottom location); Main Blocks; (5)BLOCK PROTECTION on TWO PARAMETER: BLOCKS; WPfor Block Protection; (6)AUTOMATIC STAND-BY MODE; (7)PROGRAM and ERASE SUSPEND; (8)100,000 PROGRAM/ERASE CYCLES per: BLOCK; (9)ELECTRONIC SIGNATURE: Manufacturer Code: 20h; Top Device Code, M28W800BT: 8892h; Bottom Device Code, M28W800BB: 8893h.