(China (Mainland))
Product Summary
The K7B163625A-QC65000 is a 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. The K7B163625A-QC65000 is fabricated using SAMSUNG’s high performance CMOS technology and is available in a 100pin TQFP package. Multiple power and ground pins are utilized to minimize ground bounce.
Parametrics
K7B163625A-QC65000 absolute maximum ratings: (1)Voltage on VDD Supply Relative to VSS, VDD: -0.3 to 4.6 V; (2)Voltage on VDDQ Supply Relative to VSS, VDDQ: VDD V; (3)Voltage on Input Pin Relative to VSS, VIN: -0.3 to VDD+0.3 V; (4)Voltage on I/O Pin Relative to VSS, VIO: -0.3 to VDDQ+0.3 V; (5)Power Dissipation, PD: 1.6 W; (6)Storage Temperature, TSTG: -65 to 150℃; (7)Operating Temperature, TOPR: 0 to 70℃; (8)Storage Temperature Range Under Bias, TBIAS: -10 to 85℃.
Features
K7B163625A-QC65000 features: (1)Synchronous Operation.; (2)On-Chip Address Counter; (3)Self-Timed Write Cycle; (4)On-Chip Address and Control Registers; (5)3.3V+0.165V/-0.165V Power Supply; (6)I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O; (7)5V Tolerant Inputs Except I/O Pins; (8)Byte Writable Function; (9)Global Write Enable Controls a full bus-width write; (10)Power Down State via ZZ Signal; (11)LBO Pin allows a choice of either a interleaved burst or a linear burst; (12)Three Chip Enables for simple depth expansion with No Data Contention only for TQFP; (13)Asynchronous Output Enable Control; (14)ADSP, ADSC, ADV Burst Control Pins; (15)TTL-Level Three-State Output; (16)100-TQFP-1420A; (17)Operating in commeical and industrial temperature range.
Diagrams
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 K7B161825A |
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Data Sheet |
Negotiable |
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K7B163625A |
Other |
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Data Sheet |
Negotiable |
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