Product Summary

The K6X1008T2D-TF70000 is a 128K×8 bit Super Low Power and Low Voltage full CMOS Static RAM. The device is fabricated by SAMSUNG’s advanced CMOS process technology. The K6X1008T2D-TF70000 supports verious operating temperature ranges and have various package types for user flexibility of system design. The K6X1008T2D-TF70000 also supports low data retention voltage for battery back-up operation with low data retention current.

Parametrics

K6X1008T2D-TF70000 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN,VOUT: -0.2 to VCC+0.3V(Max. 3.9V); (2)Voltage on Vcc supply relative to Vss, VCC: -0.2 to 3.9 V; (3)Power Dissipation, PD: 1.0 W; (4)Storage temperature, TSTG: -65 to 150℃; (5)Operating Temperature, TA: 0 to 70℃.

Features

K6X1008T2D-TF70000 features: (1)Process Technology: Full CMOS; (2)Organization: 128K×8; (3)Power Supply Voltage: 2.7~3.6V; (4)Low Data Retention Voltage: 1.5V(Min); (5)Three state outputs; (6)Package Type: 32-SOP-525, 32-TSOP1-0820F 32-SOP-525, 32-TSOP1-0820F.

Diagrams

K6X1008T2D-TF70000 functional block diagram

K6X1008C2D-B
K6X1008C2D-B

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K6X1008C2D-BF55
K6X1008C2D-BF55

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K6X1008C2D-F
K6X1008C2D-F

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K6X1008C2D-Q
K6X1008C2D-Q

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K6X1008T2D-B
K6X1008T2D-B

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Negotiable 
K6X1008T2D-F
K6X1008T2D-F

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Data Sheet

Negotiable