(China (Mainland))
Product Summary
The K6F2016R4E-EF70 is a 128K × 16 bit Super Low Power and Low Voltage Full CMOS Static RAM. The K6F2016R4E-EF70 is fabricated by SAMSUNG’s advanced full CMOS process technology. The device supports industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The K6F2016R4E-EF70 also supports low data retention voltage for battery back-up operation with low data retention current.
Parametrics
K6F2016R4E-EF70 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN, VOUT: -0.2 to VCC+0.3V; (2)Voltage on Vcc supply relative to Vss, VCC: -0.2 to 2.5V; (3)Power Dissipation, PD: 1.0 W; (4)Storage temperature, TSTG: -65 to 150℃; (5)Operating Temperature, TA: -40 to 85℃.
Features
K6F2016R4E-EF70 features: (1)Process Technology: Full CMOS; (2)Organization: 128K ×16 bit; (3)Power Supply Voltage: 1.65~2.2V; (4)Low Data Retention Voltage: 1.0V(Min); (5)Three State Outputs; (6)Package Type: 48-TBGA-6.00×7.00.
Diagrams
 |
 K6F2008S2E |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K6F2008T2E |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K6F2008U2E |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K6F2008V2E |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K6F2016U4E |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
K6F2016V4E |
Other |
|
Data Sheet |
Negotiable |
|
||||
