(China (Mainland))
Product Summary
The K4S641633H-BN75 is a 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 × 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the K4S641633H-BN75 to be useful for a variety of high bandwidth and high performance memory system applications.
Parametrics
K4S641633H-BN75 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN, VOUT: -1.0 ~ 4.6 V; (2)Voltage on VDD supply relative to Vss, VDD, VDDQ: -1.0 ~ 4.6 V; (3)Storage temperature, TSTG: -55 ~ +150℃; (4)Power dissipation, PD: 1.0 W; (5)Short circuit current, IOS: 50 mA.
Features
K4S641633H-BN75 features: (1)3.0V & 3.3V power supply; (2)LVCMOS compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs; (5)EMRS cycle with address key programs; (6)All inputs are sampled at the positive going edge of the system clock; (7)Burst read single-bit write operation.; (8)Special Function Support; (9)DQM for masking; (10)Auto refresh; (11)64ms refresh period (4K cycle); (12)Commercial Temperature Operation (-25 ~ 70℃); (13)Extended Temperature Operation (-25 ~ 85℃); (14)54Balls FBGA with 0.8mm ball pitch.
Diagrams
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K4S640432H-TC(L)75 |
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K4S640432H-UC |
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