IRF6662TRPBF

Product Summary

The IRF6662TRPBF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6662TRPBF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.

Parametrics

Absolute maximum ratings:(1)Drain-to-Source Voltage, VDS: 100V; (2)Gate-to-Source Voltage, VGS: ±20V; (3)at TA = 25℃ Continuous Drain Current, VGS at 10V, ID: 8.3A; (4)at TA = 70℃ Continuous Drain Current, VGS at 10V, ID: 6.6A; (5)at TA = 25℃ Continuous Drain Current, VGS at 10V, ID: 47A; (6)Pulsed Drain Current, IDM: 66A; (7)Single Pulse Avalanche Energy, EAS: 39mJ; (8)Avalanche Current, IAR: 4.9A.

Features

Features: (1)RoHs Compliant; (2)Lead-Free (Qualified up to 260℃ Reflow); (3)Application Specific MOSFETs; (4)Ideal for High Performance Isolated Converter Primary Switch Socket; (5)Optimized for Synchronous Rectification; (6)Low Conduction Losses; (7)High Cdv/dt Immunity; (8)Low Profile (<0.7mm); (9)Dual Sided Cooling Compatible; (10)Compatible with existing Surface Mount Techniques.

Diagrams