(China (Mainland))
Product Summary
The EDD5116AGTA-5B-E is a 512M bits DDR SDRAM.
Parametrics
EDD5116AGTA-5B-E absolute maximum ratings: (1)Voltage on any pin relative to VSS, VT: -1.0 to +3.6 V; (2)Supply voltage relative to VSS, VDD: -1.0 to +3.6 V; (3)Short circuit output current, IOS: 50 mA; (4)Power dissipation, PD: 1.0 W; (5)Operating ambient temperature, TA: 0 to +70℃; (6)Storage temperature, Tstg: -55 to +125℃.
Features
EDD5116AGTA-5B-E features: (1)Double-data-rate architecture; two data transfers per clock cycle; (2)The high-speed data transfer is realized by the 2 bits prefetch pipelined architecture; (3)Bi-directional data strobe (DQS) is transmitted /received with data for capturing data at the receiver; (4)Data inputs, outputs, and DM are synchronized with DQS; (5)DQS is edge-aligned with data for READs; centeraligned with data for WRITEs; (6)Differential clock inputs (CK and /CK); (7)DLL aligns DQ and DQS transitions with CK transitions; (8)Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS; (9)Data mask (DM) for write data.
Diagrams
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 EDD5108ABTA |
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EDD5108ADTA |
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EDD5108ADTA-5C |
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Negotiable |
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EDD5108ADTA-6BL-E |
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Negotiable |
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EDD5116AFTA |
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Negotiable |
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EDD5116AFTA-5 |
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Negotiable |
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