(China (Mainland))
Product Summary
The K6T8016C3M-TF70000 is a 512K×16 bit Low Power CMOS Static RAM. The device is fabricated by SAMSUNG’s advanced CMOS process technology. The K6T8016C3M-TF70000 supports industrial operating temperature ranges for user flexibility of system design. The K6T8016C3M-TF70000 also supports low data retention voltage for battery back-up operation with low data retention current.
Parametrics
K6T8016C3M-TF70000 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN,VOUT: -0.5 to VCC+0.5V; (2)Voltage on Vcc supply relative to Vss, VCC: -0.3 to 7.0 V; (3)Power Dissipation, PD: 1.0 W; (4)Storage temperature, TSTG: -65 to 150℃; (5)Operating Temperature, TA: -40 to 85℃.
Features
K6T8016C3M-TF70000 features: (1)Process Technology: TFT; (2)Organization: 512K×16; (3)Power Supply Voltage: 4.5~5.5V; (4)Low Data Retention Voltage: 2.0V(Min); (5)Three state output and TTL Compatible; (6)Package Type: 44-TSOP2-400F/R.
Diagrams
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 K6T8016C3M-B |
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K6T8016C3M-F |
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